A secure data-toggling SRAM for confidential data protection

• Main Authors: Ho, Weng-Geng, Chong, Kwen-Siong, Kim, Tony Tae-Hyoung, Gwee, Bah Hwee
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Static Random Access Memory; High Secure
• Online Access: https://hdl.handle.net/10356/155306
• Institution: Nanyang Technological University

We study the security feature of static random access memory (SRAM) against the data imprinting attack and provide a solution to protect the SRAM from this attack. There are four main contributions in this paper. First, the negative-bias temperature-instability (NBTI) degradation of PMOS transistors...