A secure data-toggling SRAM for confidential data protection

We study the security feature of static random access memory (SRAM) against the data imprinting attack and provide a solution to protect the SRAM from this attack. There are four main contributions in this paper. First, the negative-bias temperature-instability (NBTI) degradation of PMOS transistors...

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Bibliographic Details
Main Authors: Ho, Weng-Geng, Chong, Kwen-Siong, Kim, Tony Tae-Hyoung, Gwee, Bah Hwee
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2022
Subjects:
Online Access:https://hdl.handle.net/10356/155306
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Institution: Nanyang Technological University
Language: English
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