A secure data-toggling SRAM for confidential data protection
We study the security feature of static random access memory (SRAM) against the data imprinting attack and provide a solution to protect the SRAM from this attack. There are four main contributions in this paper. First, the negative-bias temperature-instability (NBTI) degradation of PMOS transistors...
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Main Authors: | Ho, Weng-Geng, Chong, Kwen-Siong, Kim, Tony Tae-Hyoung, Gwee, Bah Hwee |
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Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2022
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/155306 |
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Institution: | Nanyang Technological University |
Language: | English |
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