A 65-nm 8T SRAM compute-in-memory macro with column ADCs for processing neural networks

• المؤلفون الرئيسيون: Yu, Chengshuo, Yoo, Taegeun, Chai, Kevin Tshun Chuan, Kim, Tony Tae-Hyoung, Kim, Bongjin
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2022
• الموضوعات: Engineering::Electrical and electronic engineering; Random Access Memory; Neurons
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/163744

In this work, we present a novel 8T static random access memory (SRAM)-based compute-in-memory (CIM) macro for processing neural networks with high energy efficiency. The proposed 8T bitcell is free from disturb issues thanks to the decoupled read channels by adding two extra transistors to the stan...