Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsy...
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2023
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sg-ntu-dr.10356-1649972023-03-10T15:40:19Z Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric Li, Yuanbo Chen, Tupei Ju, Xin Salim, Teddy School of Electrical and Electronic Engineering School of Materials Science and Engineering Engineering::Electrical and electronic engineering Engineering::Materials Brain Gate Dielectrics A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ (the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsynaptic current, short-term memory plasticity, short-term memory to long-term memory transition, and potentiation and depression) under voltage pulse stimulus. In addition, the TFT shows high responsivity to illumination of light with various wavelengths (ultraviolet and visible light). Synaptic behaviors in response to light pulse stimuli, which could be employed in vision-based neuromorphic applications, are demonstrated. Large conductance change (Gmax/Gmin > 10) and ultra-low non-linearity (α < 0.5) of the potentiation and depression can be inspired by either gate bias pulses or photoelectric pulses with short pulse widths and small amplitudes. Ministry of Education (MOE) Published version The research of the project was supported by the Ministry of Education, Singapore, under grant AcRF TIER 1-2020-T1-002- 008 (RG144/20). 2023-03-08T07:24:32Z 2023-03-08T07:24:32Z 2022 Journal Article Li, Y., Chen, T., Ju, X. & Salim, T. (2022). Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric. Nanoscale, 14(28), 10245-10254. https://dx.doi.org/10.1039/D2NR02136F 2040-3364 https://hdl.handle.net/10356/164997 10.1039/D2NR02136F 28 14 10245 10254 en 1-2020-T1-002-008 RG144/20 Nanoscale © The Royal Society of Chemistry 2022. This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. application/pdf |
| institution |
Nanyang Technological University |
| building |
NTU Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NTU Library |
| collection |
DR-NTU |
| language |
English |
| topic |
Engineering::Electrical and electronic engineering Engineering::Materials Brain Gate Dielectrics |
| spellingShingle |
Engineering::Electrical and electronic engineering Engineering::Materials Brain Gate Dielectrics Li, Yuanbo Chen, Tupei Ju, Xin Salim, Teddy Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric |
| description |
A transparent thin film transistor (TFT) based on the combination of an InGaZnO channel and a high-κ
(the dielectric constant is about 42.6) TaOx gate dielectric layer is fabricated. The TFT shows robust anticlockwise hysteresis under DC voltage sweep and synaptic behaviors (i.e., excitatory postsynaptic current,
short-term memory plasticity, short-term memory to long-term memory transition, and potentiation and
depression) under voltage pulse stimulus. In addition, the TFT shows high responsivity to illumination of
light with various wavelengths (ultraviolet and visible light). Synaptic behaviors in response to light pulse
stimuli, which could be employed in vision-based neuromorphic applications, are demonstrated. Large
conductance change (Gmax/Gmin > 10) and ultra-low non-linearity (α < 0.5) of the potentiation and
depression can be inspired by either gate bias pulses or photoelectric pulses with short pulse widths and
small amplitudes. |
| author2 |
School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Li, Yuanbo Chen, Tupei Ju, Xin Salim, Teddy |
| format |
Article |
| author |
Li, Yuanbo Chen, Tupei Ju, Xin Salim, Teddy |
| author_sort |
Li, Yuanbo |
| title |
Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric |
| title_short |
Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric |
| title_full |
Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric |
| title_fullStr |
Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric |
| title_full_unstemmed |
Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaOx gate dielectric |
| title_sort |
transparent electronic and photoelectric synaptic transistors based on the combination of an ingazno channel and a taox gate dielectric |
| publishDate |
2023 |
| url |
https://hdl.handle.net/10356/164997 |
| _version_ |
1761781621018591232 |