Tensile strained direct bandgap GeSn microbridges enabled in GeSn-on-insulator substrates with residual tensile strain

• Main Authors: Burt, Daniel, Zhang, Lin, Jung, Yongduck, Joo, Hyo-Jun, Kim, Youngmin, Chen, Melvina, Son, Bongkwon, Fan, Weijun, Ikonic, Zoran, Tan, Chuan Seng, Nam, Donguk
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; Semiconductor Alloys; Compressive Strain
• Online Access: https://hdl.handle.net/10356/165003
• Institution: Nanyang Technological University

Despite having achieved drastically improved lasing characteristics by harnessing tensile strain, the current methods of introducing a sizable tensile strain into GeSn lasers require complex fabrication processes, thus reducing the viability of the lasers for practical applications. The geometric st...