Investigation of failure mechanisms for gallium nitride (GaN) based high-electron-mobility transistors (HEMTs)

• 主要作者: Hu, Shihao
• 其他作者: Ng Geok Ing
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2023
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/167112

This study investigates the failure mechanisms of Gallium Nitride (GaN) based high-electron-mobility transistors (HEMTs) under high electric field through reverse bias stress condition. The report presents a detailed literature review of the basic theoretical backgrounds and known failure mechanisms...