RF SOI EDMOS – reliability measurement

• Main Author: Koh, Jin Rong
• Other Authors: Ang Diing Shenp
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2023
• Subjects: Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/167519
• Institution: Nanyang Technological University

This project focuses on investigating the impact of Hot-Carrier Stress (HCS) on the performance of the EDNMOS transistors. The aim is to gain a better understanding of the Hot-Carrier Degradation (HCD) effects on the EDNMOS, which is important for improving the reliability and lifespan of such devices. To achieve this, the EDNMOS transistors will be subjected to a variety of stress conditions, which include different temperatures, channel lengths, and biasing stress voltages. The collected data will then be analyzed, and the relationship between HCD and the shift in parameters of the EDNMOS will be thoroughly examined and debated. The ultimate goal of this project is to add to the existing knowledge base on EDNMOS reliability and to provide valuable data and insights that can be used to optimize and design such devices in future applications.