RF SOI EDMOS – reliability measurement

This project focuses on investigating the impact of Hot-Carrier Stress (HCS) on the performance of the EDNMOS transistors. The aim is to gain a better understanding of the Hot-Carrier Degradation (HCD) effects on the EDNMOS, which is important for improving the reliability and lifespan of such devic...

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Bibliographic Details
Main Author: Koh, Jin Rong
Other Authors: Ang Diing Shenp
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2023
Subjects:
Online Access:https://hdl.handle.net/10356/167519
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Institution: Nanyang Technological University
Language: English
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