RF SOI EDMOS – reliability measurement
This project focuses on investigating the impact of Hot-Carrier Stress (HCS) on the performance of the EDNMOS transistors. The aim is to gain a better understanding of the Hot-Carrier Degradation (HCD) effects on the EDNMOS, which is important for improving the reliability and lifespan of such devic...
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| Format: | Final Year Project |
| Language: | English |
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Nanyang Technological University
2023
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| Online Access: | https://hdl.handle.net/10356/167519 |
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| Institution: | Nanyang Technological University |
| Language: | English |