Design of an ultra-low-voltage CMOS relaxation clock oscillator

This dissertation presents the design of a 0.45 V fully-integrated relaxation oscillator using TSMC 40nm CMOS process technology. It comprises, a 2-Transistor (2-T) voltage reference, a current reference generator and a comparator in conjunction of the associated switched-capacitor network. The 2-T...

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Main Author: Zhao, Bingbing
Other Authors: Chan Pak Kwong
Format: Thesis-Master by Coursework
Language:English
Published: Nanyang Technological University 2023
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Online Access:https://hdl.handle.net/10356/168607
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spelling sg-ntu-dr.10356-1686072023-07-04T15:01:19Z Design of an ultra-low-voltage CMOS relaxation clock oscillator Zhao, Bingbing Chan Pak Kwong School of Electrical and Electronic Engineering epkchan@ntu.edu.sg Engineering::Electrical and electronic engineering::Electronic circuits This dissertation presents the design of a 0.45 V fully-integrated relaxation oscillator using TSMC 40nm CMOS process technology. It comprises, a 2-Transistor (2-T) voltage reference, a current reference generator and a comparator in conjunction of the associated switched-capacitor network. The 2-T voltage reference generates an output voltage of 202 mV and displays the low temperature coefficient. The current reference generator consists of an ultra-low voltage amplifier having an embedded current mirror and a reference composite resistor under a feedback loop and multiple open-loop current mirrors for copying reference currents to generate Proportional-to-Absolute-Temperature (PTAT) de ay. This aims to compensate the delay of comparator with Complementary-to-Absolute-Temperature (CTAT) characteristic. The oscillator action is achieved by the reference current as the capacitor charging current and the switched network which is controlled by the operation of comparator to reset the capacitors. The simulation results have shown that at typical corner and room temperature, the output frequency is 112.87 kHz at 0.45V supply and the temperature coefficient (T.C.) is 46.1 ppm/°C. This yields 0.36% frequency deviation. For 200 runs of Monte-Carlo simulation, the obtained average T.C. is 137 ppm/°C and the standard deviation is 85.28 ppm/°C, leading to the process sensitivity of 7.12%. Compared to the prior-art works, the performance metrics are good in view of very low supply operation. Master of Science (Electronics) 2023-06-09T06:10:04Z 2023-06-09T06:10:04Z 2023 Thesis-Master by Coursework Zhao, B. (2023). Design of an ultra-low-voltage CMOS relaxation clock oscillator. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/168607 https://hdl.handle.net/10356/168607 en application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Electronic circuits
spellingShingle Engineering::Electrical and electronic engineering::Electronic circuits
Zhao, Bingbing
Design of an ultra-low-voltage CMOS relaxation clock oscillator
description This dissertation presents the design of a 0.45 V fully-integrated relaxation oscillator using TSMC 40nm CMOS process technology. It comprises, a 2-Transistor (2-T) voltage reference, a current reference generator and a comparator in conjunction of the associated switched-capacitor network. The 2-T voltage reference generates an output voltage of 202 mV and displays the low temperature coefficient. The current reference generator consists of an ultra-low voltage amplifier having an embedded current mirror and a reference composite resistor under a feedback loop and multiple open-loop current mirrors for copying reference currents to generate Proportional-to-Absolute-Temperature (PTAT) de ay. This aims to compensate the delay of comparator with Complementary-to-Absolute-Temperature (CTAT) characteristic. The oscillator action is achieved by the reference current as the capacitor charging current and the switched network which is controlled by the operation of comparator to reset the capacitors. The simulation results have shown that at typical corner and room temperature, the output frequency is 112.87 kHz at 0.45V supply and the temperature coefficient (T.C.) is 46.1 ppm/°C. This yields 0.36% frequency deviation. For 200 runs of Monte-Carlo simulation, the obtained average T.C. is 137 ppm/°C and the standard deviation is 85.28 ppm/°C, leading to the process sensitivity of 7.12%. Compared to the prior-art works, the performance metrics are good in view of very low supply operation.
author2 Chan Pak Kwong
author_facet Chan Pak Kwong
Zhao, Bingbing
format Thesis-Master by Coursework
author Zhao, Bingbing
author_sort Zhao, Bingbing
title Design of an ultra-low-voltage CMOS relaxation clock oscillator
title_short Design of an ultra-low-voltage CMOS relaxation clock oscillator
title_full Design of an ultra-low-voltage CMOS relaxation clock oscillator
title_fullStr Design of an ultra-low-voltage CMOS relaxation clock oscillator
title_full_unstemmed Design of an ultra-low-voltage CMOS relaxation clock oscillator
title_sort design of an ultra-low-voltage cmos relaxation clock oscillator
publisher Nanyang Technological University
publishDate 2023
url https://hdl.handle.net/10356/168607
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