Design of a CMOS current-mode voltage reference with low PVT sensitivity
This dissertation proposes a new PVT-Insensitive current-mode voltage reference utilizing second-order curvature-compensated technique. Implemented in TSMC-40nm process technology, the circuit has achieved a temperature coefficient of 18 ppm/◦C in the TT corner and Monte-Carlo T.C. of 27.33 ppm/◦...
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sg-ntu-dr.10356-1690962023-07-04T15:34:34Z Design of a CMOS current-mode voltage reference with low PVT sensitivity Lin, Youbo Chan Pak Kwong School of Electrical and Electronic Engineering epkchan@ntu.edu.sg Engineering::Electrical and electronic engineering This dissertation proposes a new PVT-Insensitive current-mode voltage reference utilizing second-order curvature-compensated technique. Implemented in TSMC-40nm process technology, the circuit has achieved a temperature coefficient of 18 ppm/◦C in the TT corner and Monte-Carlo T.C. of 27.33 ppm/◦C from −20 ◦C to 120 ◦C, demonstrating strong temperature insensitivity. The circuit, which operates a supply voltage range of 1.1V to 1.5V, gives a 622mV output reference voltage. By utilizing subthreshold MOSFET design, the power dissipation of the circuit is about 10.8uW at a 1.2V supply voltage. The simulation results have shown that the voltage reference has attained the line sensitivity of 0.0118%/V and the PSR of -58dB at 100Hz and reaching -24dB at 10MHz. The process sensitivity of the reference voltage 3.54%. Taken into account of line sensitivity, temperature span of 100 degree C and process sensitivity, the FOM for reference voltage is obtained as 3.71%. In view of circuit simplicity and low PVT sensitivity, the proposed circuit will be very useful of high precision analog circuit applications. Master of Science (Electronics) 2023-06-30T01:39:38Z 2023-06-30T01:39:38Z 2023 Thesis-Master by Coursework Lin, Y. (2023). Design of a CMOS current-mode voltage reference with low PVT sensitivity. Master's thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/169096 https://hdl.handle.net/10356/169096 en application/pdf Nanyang Technological University |
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Engineering::Electrical and electronic engineering Lin, Youbo Design of a CMOS current-mode voltage reference with low PVT sensitivity |
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This dissertation proposes a new PVT-Insensitive current-mode voltage reference utilizing
second-order curvature-compensated technique. Implemented in TSMC-40nm process
technology, the circuit has achieved a temperature coefficient of 18 ppm/◦C in the TT
corner and Monte-Carlo T.C. of 27.33 ppm/◦C from −20 ◦C to 120 ◦C, demonstrating
strong temperature insensitivity. The circuit, which operates a supply voltage range of 1.1V
to 1.5V, gives a 622mV output reference voltage. By utilizing subthreshold MOSFET
design, the power dissipation of the circuit is about 10.8uW at a 1.2V supply voltage. The
simulation results have shown that the voltage reference has attained the line sensitivity of
0.0118%/V and the PSR of -58dB at 100Hz and reaching -24dB at 10MHz. The process
sensitivity of the reference voltage 3.54%. Taken into account of line sensitivity,
temperature span of 100 degree C and process sensitivity, the FOM for reference voltage is
obtained as 3.71%. In view of circuit simplicity and low PVT sensitivity, the proposed
circuit will be very useful of high precision analog circuit applications. |
author2 |
Chan Pak Kwong |
author_facet |
Chan Pak Kwong Lin, Youbo |
format |
Thesis-Master by Coursework |
author |
Lin, Youbo |
author_sort |
Lin, Youbo |
title |
Design of a CMOS current-mode voltage reference with low PVT sensitivity |
title_short |
Design of a CMOS current-mode voltage reference with low PVT sensitivity |
title_full |
Design of a CMOS current-mode voltage reference with low PVT sensitivity |
title_fullStr |
Design of a CMOS current-mode voltage reference with low PVT sensitivity |
title_full_unstemmed |
Design of a CMOS current-mode voltage reference with low PVT sensitivity |
title_sort |
design of a cmos current-mode voltage reference with low pvt sensitivity |
publisher |
Nanyang Technological University |
publishDate |
2023 |
url |
https://hdl.handle.net/10356/169096 |
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1772827423968067584 |