Design of a CMOS current-mode voltage reference with low PVT sensitivity
This dissertation proposes a new PVT-Insensitive current-mode voltage reference utilizing second-order curvature-compensated technique. Implemented in TSMC-40nm process technology, the circuit has achieved a temperature coefficient of 18 ppm/◦C in the TT corner and Monte-Carlo T.C. of 27.33 ppm/◦...
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Format: | Thesis-Master by Coursework |
Language: | English |
Published: |
Nanyang Technological University
2023
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Online Access: | https://hdl.handle.net/10356/169096 |
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Institution: | Nanyang Technological University |
Language: | English |
Summary: | This dissertation proposes a new PVT-Insensitive current-mode voltage reference utilizing
second-order curvature-compensated technique. Implemented in TSMC-40nm process
technology, the circuit has achieved a temperature coefficient of 18 ppm/◦C in the TT
corner and Monte-Carlo T.C. of 27.33 ppm/◦C from −20 ◦C to 120 ◦C, demonstrating
strong temperature insensitivity. The circuit, which operates a supply voltage range of 1.1V
to 1.5V, gives a 622mV output reference voltage. By utilizing subthreshold MOSFET
design, the power dissipation of the circuit is about 10.8uW at a 1.2V supply voltage. The
simulation results have shown that the voltage reference has attained the line sensitivity of
0.0118%/V and the PSR of -58dB at 100Hz and reaching -24dB at 10MHz. The process
sensitivity of the reference voltage 3.54%. Taken into account of line sensitivity,
temperature span of 100 degree C and process sensitivity, the FOM for reference voltage is
obtained as 3.71%. In view of circuit simplicity and low PVT sensitivity, the proposed
circuit will be very useful of high precision analog circuit applications. |
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