2D semimetal with ultrahigh work function for sub-0.1 V threshold voltage operation of metal-semiconductor field-effect transistors
Metal-semiconductor field-effect transistors (MESFETs) offer the advantages of efficient gate control and low power consumption due to the large junction capacitance. However, the strong Fermi-level pinning caused by the metal-induced gap states makes it a great challenge to build a high-quality Sch...
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Main Authors: | Zhang, Tianjiao, Miao, Jialei, Huang, Chun, Bian, Zheng, Tian, Maoxin, Chen, Haohan, Duan, Ruihuan, Wang, Lin, Liu, Zheng, Qiao, Jingsi, Xu, Yang, Yu, Bin, Zhao, Yuda |
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其他作者: | School of Materials Science and Engineering |
格式: | Article |
語言: | English |
出版: |
2023
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主題: | |
在線閱讀: | https://hdl.handle.net/10356/169319 |
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機構: | Nanyang Technological University |
語言: | English |
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