Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate

The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been identified as a promising candidate for realizing Si-based light sources. However, the previous research suffered from a...

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Main Authors: Wu, Shaoteng, Zhang, Lin, Wan, Rongqiao, Zhou, Hao, Lee, Kwang Hong, Chen, Qimiao, Huang, Yi-Chiau, Gong, Xiao, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
LED
Online Access:https://hdl.handle.net/10356/169668
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1696682023-09-15T15:38:53Z Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate Wu, Shaoteng Zhang, Lin Wan, Rongqiao Zhou, Hao Lee, Kwang Hong Chen, Qimiao Huang, Yi-Chiau Gong, Xiao Tan, Chuan Seng School of Electrical and Electronic Engineering Engineering::Electrical and electronic engineering::Microelectronics GeSn LED Multi-Quantum Well The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been identified as a promising candidate for realizing Si-based light sources. However, the previous research suffered from a small wafer size, limiting the throughput and yield. To overcome this challenge, we report the successful growth of the first GeSn/Ge multiple-quantum-well (MQW) p-i-n LEDs on a 12-inch Si substrate. To the best of our knowledge, this represents the first report of semiconductor LEDs grown on such a large substrate. The MQW LED epitaxial layer is deposited on a 12-inch (001)-oriented intrinsic Si substrate using commercial reduced pressure chemical vapor deposition (RPCVD). In order to mitigate the detrimental effects of threading dislocation densities (TDDs) on luminescence, the GeSn/Ge is deliberately grown into a pseudomorphic. Owing to the high crystal quality and more directness in bandgap, enhanced electroluminescence (EL) integrated intensity of 27.58 times is demonstrated compared to the Ge LED. The MQW LEDs exhibit EL emission near 2 μm over a wide operating temperature range of 300 to 450 K, indicating high-temperature stability. This work shows that the GeSn/Ge MQW emitting are the potential group-IV light sources for large-scale manufacturing. Ministry of Education (MOE) National Research Foundation (NRF) Published version CAS Project for Young Scientists in Basic Research (YSBR-026); National Research Foundation Singapore under its Competitive Research Program (NRFCRP19-2017-01); Ministry of Education - Singapore AcRF Tier 2 (T2EP50121-0001 (MOE-000180-01)); Ministry of Education - Singapore AcRF Tier 1 (2021-T1-002-031 (RG112/21)). 2023-09-11T05:06:46Z 2023-09-11T05:06:46Z 2023 Journal Article Wu, S., Zhang, L., Wan, R., Zhou, H., Lee, K. H., Chen, Q., Huang, Y., Gong, X. & Tan, C. S. (2023). Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate. Photonics Research, 11(10), 1606-1612. https://dx.doi.org/10.1364/PRJ.491763 2327-9125 https://hdl.handle.net/10356/169668 10.1364/PRJ.491763 10 11 1606 1612 en NRF-CRP19-2017-01 T2EP50121-0001 (MOE-000180-01) 2021-T1-002-031 (RG112/21) Photonics Research © 2023 Chinese Laser Press. Published by Optica Publishing Group. This is an open-access article distributed under the terms of the Creative Commons Attribution License. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering::Microelectronics
GeSn
LED
Multi-Quantum Well
spellingShingle Engineering::Electrical and electronic engineering::Microelectronics
GeSn
LED
Multi-Quantum Well
Wu, Shaoteng
Zhang, Lin
Wan, Rongqiao
Zhou, Hao
Lee, Kwang Hong
Chen, Qimiao
Huang, Yi-Chiau
Gong, Xiao
Tan, Chuan Seng
Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
description The development of an efficient group-IV light source that is compatible with the CMOS process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been identified as a promising candidate for realizing Si-based light sources. However, the previous research suffered from a small wafer size, limiting the throughput and yield. To overcome this challenge, we report the successful growth of the first GeSn/Ge multiple-quantum-well (MQW) p-i-n LEDs on a 12-inch Si substrate. To the best of our knowledge, this represents the first report of semiconductor LEDs grown on such a large substrate. The MQW LED epitaxial layer is deposited on a 12-inch (001)-oriented intrinsic Si substrate using commercial reduced pressure chemical vapor deposition (RPCVD). In order to mitigate the detrimental effects of threading dislocation densities (TDDs) on luminescence, the GeSn/Ge is deliberately grown into a pseudomorphic. Owing to the high crystal quality and more directness in bandgap, enhanced electroluminescence (EL) integrated intensity of 27.58 times is demonstrated compared to the Ge LED. The MQW LEDs exhibit EL emission near 2 μm over a wide operating temperature range of 300 to 450 K, indicating high-temperature stability. This work shows that the GeSn/Ge MQW emitting are the potential group-IV light sources for large-scale manufacturing.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wu, Shaoteng
Zhang, Lin
Wan, Rongqiao
Zhou, Hao
Lee, Kwang Hong
Chen, Qimiao
Huang, Yi-Chiau
Gong, Xiao
Tan, Chuan Seng
format Article
author Wu, Shaoteng
Zhang, Lin
Wan, Rongqiao
Zhou, Hao
Lee, Kwang Hong
Chen, Qimiao
Huang, Yi-Chiau
Gong, Xiao
Tan, Chuan Seng
author_sort Wu, Shaoteng
title Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
title_short Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
title_full Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
title_fullStr Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
title_full_unstemmed Ge₀.₉₂Sn₀.₀₈/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on 12-inch Si substrate
title_sort ge₀.₉₂sn₀.₀₈/ge multi-quantum-well leds operated at 2-μm-wavelength on 12-inch si substrate
publishDate 2023
url https://hdl.handle.net/10356/169668
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