Transposable 9T-SRAM computation-in-memory for on-chip learning with probability-based single-slope SAR hybrid ADC for edge devices

• المؤلفون الرئيسيون: Jo, Yong-Jun, Zhang, Xin, Liu, Jiahao, Zhou, Jun, Zheng, Yuanjin, Kim, Tony Tae-Hyoung
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Engineering::Electrical and electronic engineering; On-Chip Learning; Zero-Skip
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/170098

This letter proposes a two-way transposable SRAM computation-in-memory (CIM) macro for inference and training in convolutional neural networks (CNNs). A novel 9T SRAM bit-cell conducts local two-way computing without shared processing units, achieving higher-processing throughput from every bit-cell...