Metal-insulator transition switching in VOx-VSe2 heterojunctions

Metal-insulator transition switching in VOx-VSe2 heterojunctions

First-order metal-insulator transition (MIT) observed in strongly correlated systems such as vanadium dioxide (VO2) holds potential in electronics, energy, to optical applications. Starting from a vanadium diselenide (VSe2) bulk crystal, we demonstrated a direct surface conversion from VSe2 to VO2 v...

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Bibliographic Details
Main Authors: Muhammad Fauzi Sahdan, Arramel, Lim, Sharon Xiaodai, Wang, Hong, Muhammad Danang Birowosuto, Haur, Sow Chorng, Ang, Kah-Wee, Wee. Andrew Thye Shen
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2023
Subjects:
Engineering::Electrical and electronic engineering
Heterojunctions
Metal Insulator Boundaries
Online Access:https://hdl.handle.net/10356/170792
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Institution: Nanyang Technological University
Language: English
Description
Summary:First-order metal-insulator transition (MIT) observed in strongly correlated systems such as vanadium dioxide (VO2) holds potential in electronics, energy, to optical applications. Starting from a vanadium diselenide (VSe2) bulk crystal, we demonstrated a direct surface conversion from VSe2 to VO2 via laser exposure in ambient condition. The process generates defects, and the heat from the laser promotes oxidation forming VOx. Raman spectra at room temperature suggest the resulting oxide formed is monoclinic (M1) VO2. Above the transition temperature (TC), all the phonon modes are damped indicating formation of the rutile phase (metallic). Photoluminescence (PL) intensity enhancement and peak shifts observed at TC suggest correlation to the band structure transformation. In addition, we observed electrically induced MIT in our lateral VSe2-VOx heterojunction device.

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