Metal-insulator transition switching in VOx-VSe2 heterojunctions

• Main Authors: Muhammad Fauzi Sahdan, Arramel, Lim, Sharon Xiaodai, Wang, Hong, Muhammad Danang Birowosuto, Haur, Sow Chorng, Ang, Kah-Wee, Wee. Andrew Thye Shen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Heterojunctions; Metal Insulator Boundaries
• Online Access: https://hdl.handle.net/10356/170792
• Institution: Nanyang Technological University

First-order metal-insulator transition (MIT) observed in strongly correlated systems such as vanadium dioxide (VO2) holds potential in electronics, energy, to optical applications. Starting from a vanadium diselenide (VSe2) bulk crystal, we demonstrated a direct surface conversion from VSe2 to VO2 v...