Metal-insulator transition switching in VOx-VSe2 heterojunctions

• Main Authors: Muhammad Fauzi Sahdan, Arramel, Lim, Sharon Xiaodai, Wang, Hong, Muhammad Danang Birowosuto, Haur, Sow Chorng, Ang, Kah-Wee, Wee. Andrew Thye Shen
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2023
• Subjects: Engineering::Electrical and electronic engineering; Heterojunctions; Metal Insulator Boundaries
• Online Access: https://hdl.handle.net/10356/170792
• Institution: Nanyang Technological University

First-order metal-insulator transition (MIT) observed in strongly correlated systems such as vanadium dioxide (VO2) holds potential in electronics, energy, to optical applications. Starting from a vanadium diselenide (VSe2) bulk crystal, we demonstrated a direct surface conversion from VSe2 to VO2 via laser exposure in ambient condition. The process generates defects, and the heat from the laser promotes oxidation forming VOx. Raman spectra at room temperature suggest the resulting oxide formed is monoclinic (M1) VO2. Above the transition temperature (TC), all the phonon modes are damped indicating formation of the rutile phase (metallic). Photoluminescence (PL) intensity enhancement and peak shifts observed at TC suggest correlation to the band structure transformation. In addition, we observed electrically induced MIT in our lateral VSe2-VOx heterojunction device.