Effects of strain/stress on quantum dots and nano-devices.

• Main Author: Shen, Zexiang.
• Other Authors: School of Physical and Mathematical Sciences
• Format: Research Report
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: http://hdl.handle.net/10356/17214
• Institution: Nanyang Technological University

Raman microscopy is a versatile characterization technique in research and industry. The main stumbling block of employing Raman microscopy in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution to nanometer scale, among which laser delivered through metal-coated tapered optical fiber (aperture)1-3 and tip-enhanced (apertureless)4-6 near-field Raman techniques are the most frequently used. In this letter, we report a new method on near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a dielectric microsphere over the sample surface in water. We have used this technique to resolve 65 nm technology device sample with poly-Si gates and SiGe stressors, as well as gold nanopatterns, and carbon nanotubes (CNTs) with excellent reproducibility.