Effects of strain/stress on quantum dots and nano-devices.

Raman microscopy is a versatile characterization technique in research and industry. The main stumbling block of employing Raman microscopy in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution to nano...

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Main Author: Shen, Zexiang.
Other Authors: School of Physical and Mathematical Sciences
Format: Research Report
Language:English
Published: 2009
Subjects:
Online Access:http://hdl.handle.net/10356/17214
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-172142023-02-28T23:10:04Z Effects of strain/stress on quantum dots and nano-devices. Shen, Zexiang. School of Physical and Mathematical Sciences DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Raman microscopy is a versatile characterization technique in research and industry. The main stumbling block of employing Raman microscopy in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution to nanometer scale, among which laser delivered through metal-coated tapered optical fiber (aperture)1-3 and tip-enhanced (apertureless)4-6 near-field Raman techniques are the most frequently used. In this letter, we report a new method on near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a dielectric microsphere over the sample surface in water. We have used this technique to resolve 65 nm technology device sample with poly-Si gates and SiGe stressors, as well as gold nanopatterns, and carbon nanotubes (CNTs) with excellent reproducibility. RG 170/06 2009-06-01T08:24:26Z 2009-06-01T08:24:26Z 2008 2008 Research Report http://hdl.handle.net/10356/17214 en 63 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Shen, Zexiang.
Effects of strain/stress on quantum dots and nano-devices.
description Raman microscopy is a versatile characterization technique in research and industry. The main stumbling block of employing Raman microscopy in nanoscience and nanotechnology is the diffraction-limited spatial resolution. Several approaches have been employed to improve the spatial resolution to nanometer scale, among which laser delivered through metal-coated tapered optical fiber (aperture)1-3 and tip-enhanced (apertureless)4-6 near-field Raman techniques are the most frequently used. In this letter, we report a new method on near-field Raman imaging with spatial resolution of about 80 nm, by trapping and scanning a dielectric microsphere over the sample surface in water. We have used this technique to resolve 65 nm technology device sample with poly-Si gates and SiGe stressors, as well as gold nanopatterns, and carbon nanotubes (CNTs) with excellent reproducibility.
author2 School of Physical and Mathematical Sciences
author_facet School of Physical and Mathematical Sciences
Shen, Zexiang.
format Research Report
author Shen, Zexiang.
author_sort Shen, Zexiang.
title Effects of strain/stress on quantum dots and nano-devices.
title_short Effects of strain/stress on quantum dots and nano-devices.
title_full Effects of strain/stress on quantum dots and nano-devices.
title_fullStr Effects of strain/stress on quantum dots and nano-devices.
title_full_unstemmed Effects of strain/stress on quantum dots and nano-devices.
title_sort effects of strain/stress on quantum dots and nano-devices.
publishDate 2009
url http://hdl.handle.net/10356/17214
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