Growth of (101¯1 ) semipolar GaN-based light-emitting diode structures on silicon-on-insulator

• المؤلفون الرئيسيون: Wannous, Beatrice, Coulon, Pierre-Marie, Dupré, Ludovic, Rol, Fabian, Rochat, Névine, Zúñiga-Pérez, Jesús, Vennéguès, Philippe, Feuillet, Guy, Templier, François
• مؤلفون آخرون: School of Physical and Mathematical Sciences
• التنسيق: مقال
• اللغة: English
• منشور في: 2023
• الموضوعات: Science::Physics; Light-Emitting Diodes; Silicon-on-Insulator Substrates
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/172511

The growth and characterization of (101¯1 ) semipolar GaN buffer, InGaN multiple quantum wells (MQWs), and light-emitting diode (LED) structure on patterned silicon-on-insulator (SOI) substrates, implementing the aspect ratio technique (ART), are reported. The early growth stages of GaN result in co...