CMOS-fabricated ring surface ion trap with TSV integration

• المؤلفون الرئيسيون: Zhao, Peng, Lim, Yu Dian, Li, Hong Yu, Likforman, Jean-Pierre, Guidoni, Luca, Desormeaux, Lilay Gros, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Fabrication; Electron traps
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/175533

We present the design, fabrication, and test of ring surface trap on 12-inch wafers with a CMOS process. The design is based on Through Silicon Vias (TSV) interconnects. Up to 200 ions were loaded and cooled; preliminary compensations of electrostatic potential imperfections show that rotational sym...