CMOS-fabricated ring surface ion trap with TSV integration

• Main Authors: Zhao, Peng, Lim, Yu Dian, Li, Hong Yu, Likforman, Jean-Pierre, Guidoni, Luca, Desormeaux, Lilay Gros, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2024
• Subjects: Engineering; Fabrication; Electron traps
• Online Access: https://hdl.handle.net/10356/175533
• Institution: Nanyang Technological University

We present the design, fabrication, and test of ring surface trap on 12-inch wafers with a CMOS process. The design is based on Through Silicon Vias (TSV) interconnects. Up to 200 ions were loaded and cooled; preliminary compensations of electrostatic potential imperfections show that rotational sym...