Effects of vacancies on device performance

• المؤلف الرئيسي: Yan, Alan Yik Loon
• مؤلفون آخرون: Pey Kin Leong
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17983
• المؤسسة: Nanyang Technological University

A process to fabricate sub-nanometer MOS transistor, is being demonstrated through an ion implantation step by the TSUPREM4 process simulator and MEDICI device simulator. The main objective of this report is to investigate the effects of the vacancies on device performance. Crystalline (100) silicon...