Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
This work investigates the off-state leakage characteristics of AlN/GaN/AlGaN high electron mobility transistors (HEMTs) on Si substrate with varying mesa depths and uncovers the existence of a parasitic channel associated with the AlGaN back barrier. Significant differences in off-state leakage up...
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Main Authors: | , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2024
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/180538 |
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Institution: | Nanyang Technological University |
Language: | English |
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