AlN/GaN/AlGaN-on-Si HEMT achieving 1.3 W/mm at 5 v for 5G FR2 handsets

• المؤلفون الرئيسيون: Li, Hanchao, Xie, Hanlin, Xie, Qingyun, Liu, Siyu, Wang, Yue, Wang, Yuxuan, Ranjan, Kumud, Zhuang, Yihao, Gong, Xiao, Ng, Geok Ing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2025
• الموضوعات: Engineering; Double heterostructure HEMTs; Low voltage application
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/182292
• المؤسسة: Nanyang Technological University

This Letter reports a double heterostructure (DH) AlN/GaN/AlGaN-on-Si HEMT, which has been proposed, for low voltage (LV, ≤5 V) RF operation. The proposed transistor shows excellent DC (Idmax = 1.9 A/mm, gmmax = 0.66 S/mm) and RF small-signal characteristics (fT/fmax = 145/195 GHz). Continuous-wave...