Optimization of metal barrier layers for enhanced SOI-based Ge PIN photodetector performance
This thesis investigates the optimization of titanium disilicide (TiSi₂) as a metal barrier layer for germanium PIN photodetectors on silicon-on-insulator (SOI) substrates to enhance their performance in high-speed optical communication systems. The study highlights the limitations of tantalum ni...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Thesis-Master by Coursework |
| اللغة: | English |
| منشور في: |
Nanyang Technological University
2025
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/183095 |
| الوسوم: |
إضافة وسم
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| المؤسسة: | Nanyang Technological University |
| اللغة: | English |
| الملخص: | This thesis investigates the optimization of titanium disilicide (TiSi₂) as a metal barrier layer
for germanium PIN photodetectors on silicon-on-insulator (SOI) substrates to enhance their
performance in high-speed optical communication systems. The study highlights the
limitations of tantalum nitride (TaN) in high-speed applications and explores the potential of
TiSi₂ in reducing contact resistance and improving device efficiency. Using the Design of
Experiments (DOE) methodology, the research systematically evaluates the effects of critical
process parameters—titanium layer thickness, annealing temperature, and annealing time on
the electrical and optical properties of photodetectors have been investigated. |
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