Scalable compact modeling for nanometer CMOS technology

• Main Author: See, Guan Huei
• Other Authors: Zhou Xing
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: https://hdl.handle.net/10356/18733
• Institution: Nanyang Technological University

This thesis documents the compact model developed for bulk MOSFET and double-gate MOSFET. The unified regional modeling approach is used in the physics-based scalable model development for bulk and double-gate MOSFETs. Surface potential models are developed regionally in accumulation, weak accumulat...