Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy

Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photo...

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Main Author:	Miao, Yubo.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Language:	English
Published:	2009
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
Online Access:	http://hdl.handle.net/10356/19674
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-19674
record_format	dspace
spelling	sg-ntu-dr.10356-196742023-07-04T15:29:44Z Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy Miao, Yubo. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photoluminescence (PL) showed a strong dependence of the PL linewidth on the substrate temperature. Master of Engineering 2009-12-14T06:21:03Z 2009-12-14T06:21:03Z 1995 1995 Thesis http://hdl.handle.net/10356/19674 en NANYANG TECHNOLOGICAL UNIVERSITY 140 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Miao, Yubo. Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
description	Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photoluminescence (PL) showed a strong dependence of the PL linewidth on the substrate temperature.
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Miao, Yubo.
format	Theses and Dissertations
author	Miao, Yubo.
author_sort	Miao, Yubo.
title	Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
title_short	Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
title_full	Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
title_fullStr	Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
title_full_unstemmed	Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
title_sort	characteristics of inalas/ingaas heterostructures grown on inp substrates by molecular beam epitaxy
publishDate	2009
url	http://hdl.handle.net/10356/19674
_version_	1772827252492337152

Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy

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