Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy

• Main Author: Miao, Yubo.
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Language: English
• Published: 2009
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics; DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/19674
• Institution: Nanyang Technological University

Molecular beam epitaxial growth of In0.52Al0.48As epilayer on InP(100) substrate at a wide range of substrate temperatures (470-550 degrees celcius) and at arsenic overpressure (V/III ratio) which is higher than previously reported is carried out. Analysis performed using low temperature (4 K) photo...