Epitaxy and X-ray lithography of silicon germanium semiconductors

Epitaxy and X-ray lithography of silicon germanium semiconductors

Three series of silicon germanium (SiGe) films totaling fourty seven wafers had been grown by chemical vapor deposition (CVD) technique on Si(100) and Si(111) substrates. The first series (series 1) consists of nominally undoped SiGe single layers with Ge content of 10 at.% and 30 at.% . The second...

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Bibliographic Details
Main Author: Wong, Terence Kin Shun.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/2874
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Institution: Nanyang Technological University
Description
Summary:Three series of silicon germanium (SiGe) films totaling fourty seven wafers had been grown by chemical vapor deposition (CVD) technique on Si(100) and Si(111) substrates. The first series (series 1) consists of nominally undoped SiGe single layers with Ge content of 10 at.% and 30 at.% . The second series (series 2) consists of undoped as well as boron and phosphorus doped SiGe single layers with Ge content of 10, 20 and 30 at.%. The third series (series 3) are SiGe heterostructures and the multilayer stacks include single SiGe quantum well, coupled multiple quantum wells and modulation doped high mobility SiGe layers.

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