Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)

The development of copper metallization for deep submicron integrated circuits (DSICs) was a project jointly funded by the Ministry of Education (MoE) and the Agency for Science Technology and Research (A*STAR). Being a very broad based project, the report is deliberately divided into 3 parts. Each...

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Bibliographic Details
Main Authors: Krishnamachar Prasad, Zhang, Dao Hua, Tan, Cher Ming
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2896
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Institution: Nanyang Technological University
Description
Summary:The development of copper metallization for deep submicron integrated circuits (DSICs) was a project jointly funded by the Ministry of Education (MoE) and the Agency for Science Technology and Research (A*STAR). Being a very broad based project, the report is deliberately divided into 3 parts. Each part is a complete report by itself - complete with summary, table of contents and various chapters. The 3 parts are identified as follows: