Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)

The development of copper metallization for deep submicron integrated circuits (DSICs) was a project jointly funded by the Ministry of Education (MoE) and the Agency for Science Technology and Research (A*STAR). Being a very broad based project, the report is deliberately divided into 3 parts. Each...

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Main Authors: Krishnamachar Prasad, Zhang, Dao Hua, Tan, Cher Ming
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2896
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Institution: Nanyang Technological University
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spelling sg-ntu-dr.10356-28962023-03-04T03:19:30Z Development of copper metallization for Deep Submicron Integrated Circuits (DSICs) Krishnamachar Prasad Zhang, Dao Hua Tan, Cher Ming School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits The development of copper metallization for deep submicron integrated circuits (DSICs) was a project jointly funded by the Ministry of Education (MoE) and the Agency for Science Technology and Research (A*STAR). Being a very broad based project, the report is deliberately divided into 3 parts. Each part is a complete report by itself - complete with summary, table of contents and various chapters. The 3 parts are identified as follows: 2008-09-17T09:16:32Z 2008-09-17T09:16:32Z 2004 2004 Research Report http://hdl.handle.net/10356/2896 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Krishnamachar Prasad
Zhang, Dao Hua
Tan, Cher Ming
Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)
description The development of copper metallization for deep submicron integrated circuits (DSICs) was a project jointly funded by the Ministry of Education (MoE) and the Agency for Science Technology and Research (A*STAR). Being a very broad based project, the report is deliberately divided into 3 parts. Each part is a complete report by itself - complete with summary, table of contents and various chapters. The 3 parts are identified as follows:
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Krishnamachar Prasad
Zhang, Dao Hua
Tan, Cher Ming
format Research Report
author Krishnamachar Prasad
Zhang, Dao Hua
Tan, Cher Ming
author_sort Krishnamachar Prasad
title Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)
title_short Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)
title_full Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)
title_fullStr Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)
title_full_unstemmed Development of copper metallization for Deep Submicron Integrated Circuits (DSICs)
title_sort development of copper metallization for deep submicron integrated circuits (dsics)
publishDate 2008
url http://hdl.handle.net/10356/2896
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