Development of molecular beam epitaxial growth processes for RF device technology

• Main Author: Yoon, Soon Fatt.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/2929
• Institution: Nanyang Technological University

Carbon is a superior p-type dopant to beryllium or zinc in GaAs and InGaAs primarily because of its lower diffusion coefficient and higher electrical activity. The usage of carbon in the base of heterojunction bipolar transistors (HBTs) increases the device reliability. Carbon tetrabromide (CBr4) has become a popular choice for carbon doping precursors because of its high doping efficiency and relative insensitivity to growth conditions. Solid-source molecular beam epitaxy (SSMBE) offers the advantage of a hydrogen-free environment for the growth of carbon-doped IH-V semiconductor layers, eliminating the passivation of carbon acceptors by hydrogen that is commonly observed in carbon doped GaAs (or InGaAs) layers grown by techniques with hydrogen rich environment.