Development of molecular beam epitaxial growth processes for RF device technology

• Main Author: Yoon, Soon Fatt.
• Other Authors: School of Electrical and Electronic Engineering
• Format: Research Report
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/2929
• Institution: Nanyang Technological University

Carbon is a superior p-type dopant to beryllium or zinc in GaAs and InGaAs primarily because of its lower diffusion coefficient and higher electrical activity. The usage of carbon in the base of heterojunction bipolar transistors (HBTs) increases the device reliability. Carbon tetrabromide (CBr4) ha...