Study of copper contamination and copper induced particles for 2nd generation 300mm wafer fab

• Main Author: Chan, Jin Seng.
• Other Authors: Chen, Tupei
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Electronic packaging
• Online Access: http://hdl.handle.net/10356/3293
• Institution: Nanyang Technological University

While defects have always been a concern in wafer processing, until recently little attention has focused on backside, edge and bevel defects, simply due to the lack of suitable methods and little awareness about their effects. The variety of backside defects can have a major impact on yield and scrap and ultimately production costs. The author has studied general particles and residues, "fall-on" particles that shed from the backside, edge and bevel areas of post-processed wafers and land on a wafer below, and "sticky" particles that only migrate if physically contacted. All these defects would cause either yield loss or wafer scrap.