Characterization of deep trench etch recipe
This thesis presents the Design of Experiments (DOEs) done on deep trench etch recipe using Applied Material's decoupled plasma source reactor, DPS 5200 Centura II Deep Trench Etcher, intended for use in High Voltage Bipolar Transistor (HX) process development as isolation in X-Fab Semiconducto...
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3424 |
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| Institution: | Nanyang Technological University |
| Summary: | This thesis presents the Design of Experiments (DOEs) done on deep trench etch recipe using Applied Material's decoupled plasma source reactor, DPS 5200 Centura II Deep Trench Etcher, intended for use in High Voltage Bipolar Transistor (HX) process development as isolation in X-Fab Semiconductor Foundry. The DOE results will be used for: · Fine-tuning of parameters to achieve desired trench profile · Troubleshooting on any drift in the input parameters · Future development of similar processes that required deep trench · Further improvement of the deep trench recipes |
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