Stress measurement in copper films
The aim is to study the behaviour of copper film stack deposited on silicon wafers as a function of temperature and time by monitoring the sample curvvature during a specified thermal history.
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2008
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sg-ntu-dr.10356-35452023-07-04T15:49:31Z Stress measurement in copper films Teo, Chee Hiang. Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials The aim is to study the behaviour of copper film stack deposited on silicon wafers as a function of temperature and time by monitoring the sample curvvature during a specified thermal history. Master of Science (Microelectronics) 2008-09-17T09:32:01Z 2008-09-17T09:32:01Z 2003 2003 Thesis http://hdl.handle.net/10356/3545 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Electronic apparatus and materials Teo, Chee Hiang. Stress measurement in copper films |
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The aim is to study the behaviour of copper film stack deposited on silicon wafers as a function of temperature and time by monitoring the sample curvvature during a specified thermal history. |
author2 |
Prasad, Krishnamachar |
author_facet |
Prasad, Krishnamachar Teo, Chee Hiang. |
format |
Theses and Dissertations |
author |
Teo, Chee Hiang. |
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Teo, Chee Hiang. |
title |
Stress measurement in copper films |
title_short |
Stress measurement in copper films |
title_full |
Stress measurement in copper films |
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Stress measurement in copper films |
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Stress measurement in copper films |
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stress measurement in copper films |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/3545 |
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1772827134365007872 |