Study of electromigration-induced voiding mechanisms in Cu interconnects

150 p.

Saved in:

Bibliographic Details
Main Author:	Anand Vishwanath Vairagar
Other Authors:	Ahila Krishnamoorthy
Format:	Theses and Dissertations
Published:	2010
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Online Access:	https://hdl.handle.net/10356/35952
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-35952
record_format	dspace
spelling	sg-ntu-dr.10356-359522023-03-04T16:47:42Z Study of electromigration-induced voiding mechanisms in Cu interconnects Anand Vishwanath Vairagar Ahila Krishnamoorthy Subodh Gautam Mhaisalkar School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects 150 p. Electromigration has been a very active research topic ever since it was first discovered to be the failure mechanism in integrated circuit (IC) interconnects and has attracted interest of numerous researchers so far, especially due to its direct technological implications. With the advent of new Cu/low-k interconnects and aggressive technology scaling, electromigration has become a major reliability concern for IC interconnects. The subject of the present research is the study of electromigration in Cu dual-damascene interconnects. The objectives of this research are to investigate electromigration behavior of dual-damascene Cu interconnects, identify key electromigration issues and develop in-depth understanding of the electromigration-induced voiding mechanism in Cu dual-damascene interconnects DOCTOR OF PHILOSOPHY (MSE) 2010-04-23T02:14:34Z 2010-04-23T02:14:34Z 2006 2006 Thesis Anand Vishwanath Vairagar. (2006). Study of electromigration-induced voiding mechanisms in Cu interconnects. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/35952 10.32657/10356/35952 application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects Anand Vishwanath Vairagar Study of electromigration-induced voiding mechanisms in Cu interconnects
description	150 p.
author2	Ahila Krishnamoorthy
author_facet	Ahila Krishnamoorthy Anand Vishwanath Vairagar
format	Theses and Dissertations
author	Anand Vishwanath Vairagar
author_sort	Anand Vishwanath Vairagar
title	Study of electromigration-induced voiding mechanisms in Cu interconnects
title_short	Study of electromigration-induced voiding mechanisms in Cu interconnects
title_full	Study of electromigration-induced voiding mechanisms in Cu interconnects
title_fullStr	Study of electromigration-induced voiding mechanisms in Cu interconnects
title_full_unstemmed	Study of electromigration-induced voiding mechanisms in Cu interconnects
title_sort	study of electromigration-induced voiding mechanisms in cu interconnects
publishDate	2010
url	https://hdl.handle.net/10356/35952
_version_	1759857948591390720

Study of electromigration-induced voiding mechanisms in Cu interconnects

Similar Items