Simulation of stress in advanced silicided device structures

• Main Author: Wong, Michael Hon Weng.
• Other Authors: Pey, Kin Leong
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• Online Access: http://hdl.handle.net/10356/3745
• Institution: Nanyang Technological University

In this project, a study of the process-induced stress associated with the silicidation of the poly-Si gate was done. The TSUPREM-4 software was used to simulate the growth of both the Ti- and Co-silicided 0.1 8um gate structures. The stress readings at the top corner of the poly-Si gate and in the...