Simulation of stress in advanced silicided device structures

Simulation of stress in advanced silicided device structures

In this project, a study of the process-induced stress associated with the silicidation of the poly-Si gate was done. The TSUPREM-4 software was used to simulate the growth of both the Ti- and Co-silicided 0.1 8um gate structures. The stress readings at the top corner of the poly-Si gate and in the...

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書目詳細資料
主要作者:	Wong, Michael Hon Weng.
其他作者:	Pey, Kin Leong
格式:	Theses and Dissertations
出版:	2008
主題:	DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
在線閱讀:	http://hdl.handle.net/10356/3745
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University

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