Simulation of stress in advanced silicided device structures
In this project, a study of the process-induced stress associated with the silicidation of the poly-Si gate was done. The TSUPREM-4 software was used to simulate the growth of both the Ti- and Co-silicided 0.1 8um gate structures. The stress readings at the top corner of the poly-Si gate and in the...
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| 格式: | Theses and Dissertations |
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2008
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| 在線閱讀: | http://hdl.handle.net/10356/3745 |
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