Copper-ultra low k porous SiLK integration for deep submicron integrated circuits

• 主要作者: Yang, Lieyong
• 其他作者: P. D. Foo
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• 在線閱讀: https://hdl.handle.net/10356/3838

The integration of Cu and ULK porous SiLK using different barriers on blanket and patterned wafers has been investigated. This includes characterizations of ULK porous SiLK, Ta based barrier on ULK structures and Ta(N)/SiCN/ULK SiLK structures, and integration of Cu-ULK porous SiLK with different ba...