Copper-ultra low k porous SiLK integration for deep submicron integrated circuits

• المؤلف الرئيسي: Yang, Lieyong
• مؤلفون آخرون: P. D. Foo
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/3838

The integration of Cu and ULK porous SiLK using different barriers on blanket and patterned wafers has been investigated. This includes characterizations of ULK porous SiLK, Ta based barrier on ULK structures and Ta(N)/SiCN/ULK SiLK structures, and integration of Cu-ULK porous SiLK with different ba...