Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique

Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integra...

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Bibliographic Details
Main Author: Dong, Nie
Other Authors: Wang Yixin
Format: Theses and Dissertations
Language:English
Published: 2010
Subjects:
Online Access:https://hdl.handle.net/10356/39929
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Institution: Nanyang Technological University
Language: English