Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique
Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integra...
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Format: | Theses and Dissertations |
Language: | English |
Published: |
2010
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Online Access: | https://hdl.handle.net/10356/39929 |
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Institution: | Nanyang Technological University |
Language: | English |