Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique
Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integra...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Theses and Dissertations |
| 語言: | English |
| 出版: |
2010
|
| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/39929 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|