Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique
Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integra...
محفوظ في:
| المؤلف الرئيسي: | |
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| مؤلفون آخرون: | |
| التنسيق: | Theses and Dissertations |
| اللغة: | English |
| منشور في: |
2010
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| الموضوعات: | |
| الوصول للمادة أونلاين: | https://hdl.handle.net/10356/39929 |
| الوسوم: |
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| الملخص: | Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integration of optoelectronic devices. In addition, defect-enhanced interdiffusion provides a unique opportunity to study the interdifussion. In this thesis, defect generation using inductively coupled argon (Ar) plasma (Ar-ICP) exposure, defect-enhanced intermixing and multiple band-gap implementations have been investigated for both InP- and GaAs-based QW and QD structures. In this techinque, the mobile point defects are generated at the near surface region of a structure dut to exposure to ICP Ar plasma and enhance intermixing in the subsequent rapid thermal annealing (RTA) process, whereas band-gap halftones can be achieved in several approaches. |
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