Implementation of multiple band gaps of quantum wells/dots based on inductively-coupled argon plasma technique

• المؤلف الرئيسي: Dong, Nie
• مؤلفون آخرون: Wang Yixin
• التنسيق: Theses and Dissertations
• اللغة: English
• منشور في: 2010
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/39929

Recently, defect-enhanced interdiffusion, known as intermixing, has been extensively investigated on a wide range of III-V semiconductor quantum well (QW) and quantum dot (QD) structures as a postgrowth process to implement multiple band-gap engergies across a single substrate for monolithic integra...