Fabrication of high brightness light emitting diode
This project was to design and fabricate a high-brightness GaN based light emitting diode (LED) on a <111> silicon substrate using a new light emitting disk structure to enhance the light extraction. The critical breakthrough that enabled fabrication of the first high-brightness blue LED using...
Saved in:
| 主要作者: | |
|---|---|
| 其他作者: | |
| 格式: | Final Year Project |
| 語言: | English |
| 出版: |
2010
|
| 主題: | |
| 在線閱讀: | http://hdl.handle.net/10356/40292 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|